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[Analysis Case] Evaluation of Band Structure by X-ray Absorption and Emission Spectroscopy

[Analysis Case] Evaluation of Band Structure by X-ray Absorption and Emission Spectroscopy

Detailed information about the valence band, conduction band, and gap states of the material can be obtained.

Understanding the band structure, including valence bands, conduction bands, and gap states, is an extremely important evaluation criterion for controlling various properties of materials. However, there are limited analytical methods available for direct and detailed assessment of these aspects. Simultaneous measurements of X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) using synchrotron radiation allow for a comprehensive understanding of the band structure, as well as detailed information regarding the attribution of the elements and orbitals that compose it. This document presents the XAS and XES spectra of GaN substrates as an example of measurement.

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[SXES] Soft X-ray Emission Spectroscopy

[SXES] Soft X-ray Emission Spectroscopy

SXES is a method that evaluates the chemical bonding state using soft X-rays emitted from materials.

- It is possible to evaluate the chemical bonding states focusing on specific elements in the sample (especially light elements such as B, C, N, O). - The spectral shape reflects the partial density of states of the targeted elements in the valence band. - Evaluation of the band structure is also possible through simultaneous measurement with X-ray absorption spectroscopy (XAS). - Since information from the bulk is obtained, it is less affected by the influence of the surface region within a few nanometers. - Evaluation can be performed without being affected by charging effects, even for insulators. - The detection limit is low (<1 atomic%), allowing for the evaluation of trace components.

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[Analysis Case] Evaluation of the Skin Permeability of Melbromin

[Analysis Case] Evaluation of the Skin Permeability of Melbromin

Information about valence bands and intra-gap levels can be obtained by element.

Soft X-ray emission spectroscopy (SXES) using synchrotron radiation is widely used as a method to evaluate the electronic states of materials because it allows for the direct acquisition of the partial density of states (pDOS) near the Fermi level for each element constituting the material. Furthermore, the characteristics of this method include: 1. Information from the bulk can be obtained, 2. It can be evaluated without being affected by charging effects even for insulators, and 3. It has a low detection limit (less than 1 atomic %), making it particularly effective for evaluating materials containing light elements (such as B, C, N, O). In this document, we will introduce the SXES spectrum of a GaN substrate as a measurement example.

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[Analysis Case] Measurement of Partial Density of States of GaN

[Analysis Case] Measurement of Partial Density of States of GaN

Information about valence bands and gap states can be obtained by element.

Soft X-ray emission spectroscopy (SXES) using synchrotron radiation is widely used as a method to evaluate the electronic states of materials, as it allows for the direct acquisition of the partial density of states (pDOS) near the Fermi level for each element constituting the material. Furthermore, the characteristics of this method include: 1. Information from the bulk can be obtained. 2. It can be evaluated without being affected by charging effects, even for insulators. 3. The detection limit is low (<1 atomic%). These features make it particularly effective for evaluating materials containing light elements (such as B, C, N, O). In this document, we will introduce the SXES spectrum of a GaN substrate as a measurement example.

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